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LET20015 - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

General Description

The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 26 V in common source mode at frequencies up to 2 GHz.

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Datasheet Details

Part number LET20015
Manufacturer STMicroelectronics
File Size 67.53 KB
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Datasheet download datasheet LET20015 Datasheet

Full PDF Text Transcription for LET20015 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LET20015. For precise diagrams, and layout, please refer to the original PDF.

LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON...

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GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION • IS-97 CDMA PERFORMANCES POUT = 2.5 W EFF. = 20 % DESCRIPTION The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20015 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.

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