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LET20030S - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

General Description

The LET20030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 26 V in common source mode at frequencies up to 2 GHz.

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Datasheet Details

Part number LET20030S
Manufacturer STMicroelectronics
File Size 43.02 KB
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Datasheet download datasheet LET20030S Datasheet

Full PDF Text Transcription for LET20030S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LET20030S. For precise diagrams, and layout, please refer to the original PDF.

LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMO...

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GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION • IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF = 17 % PowerSO-10RF (straight lead) ORDER CODE LET20030S BRANDING LET20030S DESCRIPTION The LET20030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz.

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