DESCRIPTION
LET20030S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET20030S’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PIN CONNECTION SOURCE GATE DRAIN Mounting recommendations are available in (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS
(TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 TBD 140 165 -65 to +175 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 1.0 °C/W 1/4 February, 27 2003 LET20030S ELECTR...
STMicroelectronics
