STMicroelectronics LET20045C
The LET20045C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20045C is designed for high gain and broadband performance operating in common source mode at 36 V. It is ideal for base station applications requiring high linearity.| Part No. | LET20045C |
|---|---|
| Datasheet | LET20045C Download |
| Manufacturer |  STMicroelectronics |
| Description | RF power transistor |
| Buy | Stock & Price |
FEATURES
● Excellent thermal stability● Common source configuration
● POUT (@ 28 V)= 54 W with 13.3 dB gain @ 2000 MHz
● POUT (@ 36 V)= 65 W with 12.5 dB gain @ 2000 MHz
● BeO free package
● In compliance with the 2002/95/EC European directive
DESCRIPTION
M243 epoxy sealed Figure 1. Pin out 1. Drain 2. Gate 1 3 2 3. Source Table 1. Device summary Order code LET20045C Package M243 Branding LET20045C July 2011 Doc ID 022024 Rev 1 1/9 9 Maximum ratings 1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25 °C) Symbol Parameter V(BR)DSS VGS ID PDISS TJ TSTG Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70 °C) Max. operating junction temperature Storage temperature Table 3. Thermal data Symbol Parameter Rth(JC) Junction-case thermal resistance LET20045C Value Unit 80 V -0.5 to +15 V 12 A 130 W 200 °C -65 to +150 °C Value 1.0 Unit °C/W 2/9 Doc ID 022024 Rev 1 LET20045C 2 Electrical characteristics TC = 25 °C Table 4. Symbol Static Test conditions...
