STMicroelectronics LET21030C
The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.| Part No. | LET21030C |
|---|---|
| Datasheet | LET21030C Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| Buy | Stock & Price |
DESCRIPTION
PIN CONNECTION 1 3 2 1. Drain 2. Gate 3. SourceABSOLUTE MAXIMUM RATINGS
(TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 4 65 200 -65 to +200 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 2 °C/W January, 24 2003 1/4 LET21030C ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V ID = 20 µA VDS = 26 V VDS = 0 V ID = TBD ID = 1 A ID = 1 A VDD = 26 V VDD = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz 2 0.29 2 TBD TBD TBD Test Conditions Min. 65 1 1 4.5 0.4 Typ. Max. Unit V µA µA V V mho pF pF pF * Including input matching capacitor in package ? Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f = 2170 MHz) PO...
