| Part number | LET8180 |
|---|---|
| Datasheet | LET8180_STMicroelectronics.pdf |
| File Size | 33.56 KB |
| Manufacturer | STMicroelectronics |
| Description | RF POWER TRANSISTORS Ldmos Enhanced Technology |
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The LET8180 is a mon source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in mon source mode at 32 V. Its internal matching makes it ideal for base station applications requiring high linearity.
See all STMicroelectronics datasheets
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