LET8180 - RF POWER TRANSISTORS Ldmos Enhanced Technology
STMicroelectronics
General Description
The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.
The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V.
Full PDF Text Transcription for LET8180 (Reference)
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LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION,...
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L MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 220 W with 17 dB TYP. gain @ 860 MHz • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION ORDER CODE LET8180 M252 epoxy sealed BRANDING LET8180 DESCRIPTION The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for base station applications requiring hi
LET8180 Datasheet
