STMicroelectronics LET8180
The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for base station applications requiring high linearity.| Part No. | LET8180 |
|---|---|
| Datasheet | LET8180 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| Buy | Stock & Price |
DESCRIPTION
PIN CONNECTION 1 2 3 5 4 1. Drain 2. Drain 3. Source 4. Gate 5. GateABSOLUTE MAXIMUM RATINGS
(TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc =+70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 18 289 200 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.45 °C/W January, 28 2003 1/4 LET8180 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 32 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions ID = 10 µA VDS = 32 V VDS = 0 V ID = TBD ID = 3 A ID = 3 A VDS = 32 V VDS = 32 V VDS = 32 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 2.5 0.28 2.6 TBD 70 Min. 65 10 1 4.5 0.45 Typ. Max. Unit V µA µA V V mho pF pF pF * Includes Internal Input Moscap. Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f =...
