RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
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LET9045S
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE • HIGH GAIN • ESD PROTECTION • AVAILABLE IN TAPE & REEL with TR SUFFIX DESCRIPTION The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.
LET9045S Datasheet
