STMicroelectronics LET9070CB
The LET9070CB is a common source N-channel enhancement mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9070CB is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.FEATURES
● Excellent thermal stability● Common source configuration
● POUT (@ 28 V)= 70 W with 17 dB gain @ 945 MHz
● BeO free package
● In compliance with the 2002/95/EC European directive
● Bidirectional ESD Figure 1. Pin out 1 3
DESCRIPTION
1. Drain 2. Gate 2 3. Source Order code LET9070CB Table 1. Device summary Package M243 July 2013 This is information on a product in full production. DocID023782 Rev 2 Branding LET9070CB 1/14 14 Contents Contents LET9070CB 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .