STMicroelectronics LET9070FB
The LET9070FB is a common source N-channel enhancement mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9070FB is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.| Part No. | LET9070FB |
|---|---|
| Datasheet | LET9070FB Download |
| Manufacturer |  STMicroelectronics |
| Description | RF power transistor |
| Buy | Stock & Price |
FEATURES
● Excellent thermal stability● Common source configuration
● POUT (@ 28 V)= 70 W with 16 dB gain @ 945 MHz
● BeO free package
● In compliance with the 2002/95/EC European directive
● Bidirectional ESD M250 epoxy sealed
DESCRIPTION
Figure 1. Pin out 1 3 2 1. Drain 2. Gate 3. Source Table 1. Device summary Order code LET9070FB Package M250 December 2012 This is information on a product in full production. Doc ID 024101 Rev 1 Branding LET9070FB 1/9 9 Maximum ratings 1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25 °C) Symbol Parameter V(BR)DSS VGS ID PDISS TJ TSTG Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70 °C) Max. operating junction temperature Storage temperature Table 3. Thermal data Symbol Parameter Rth(JC) Junction-case thermal resistance LET9070FB Value Unit 80 V -10 to +15 V 12 A 130 W 200 °C -65 to +150 °C Value 1.0 Unit °C/W 2/9 Doc ID 024101 Rev 1 LET9070FB 2 Electrical characteristics TC = 25 °C Table 4. Symbol S...
