STMicroelectronics LET9085
The LET9085 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9085 is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.| Part No. | LET9085 |
|---|---|
| Datasheet | LET9085 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 2 3 1. Drain 2. Source 3. Gate Unit V V A W °C °C -0.5 to +15 12 186 200 -65 to +150 THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.7 °C/W January, 28 2003 1/4 LET9085 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol V(BR)DSS IDSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V ID = 10 µA VDS = 26 V VDS = 65 V VDS = 0 V ID = TBD ID = 2 A ID = 6 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.9 TBD 0.19 8 TBD 75 0.4 Test Conditions Min. 65 1 10 1 Typ. Max. Unit V µA µA µA V V mho pF pF pF * Includes Internal Input Moscap. DYNAMIC (f = 865 - 895 MHz ) Symbol P1dB ηD GP IMD3 Load mismatch POUT...
