LET9085 - RF POWER TRANSISTORS Ldmos Enhanced Technology
STMicroelectronics
General Description
The LET9085 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.
The LET9085 is designed for high gain and broadband performance operating in common source mode at 26 V.
Full PDF Text Transcription for LET9085 (Reference)
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LET9085. For precise diagrams, and layout, please refer to the original PDF.
LET9085 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA PERFORMANCES POUT = 20 W EFF. = 28 % • EDGE PER...
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L MOSFETs • IS-95 CDMA PERFORMANCES POUT = 20 W EFF. = 28 % • EDGE PERFORMANCES POUT = 35 W EFF. = 35 % • GSM PERFORMANCES POUT = 75 W EFF. = 55 % • EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION PIN CONNECTION 1 M265 epoxy sealed ORDER CODE LET9085 BRANDING LET9085 DESCRIPTION The LET9085 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9085 is designed for high gain and broadband performance operating in common source mode at 26 V.
LET9085 Datasheet
