LET9130 - RF POWER TRANSISTORS Ldmos Enhanced Technology
STMicroelectronics
General Description
The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.
The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V.
Full PDF Text Transcription for LET9130 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
LET9130. For precise diagrams, and layout, please refer to the original PDF.
LET9130 RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA: 865-895 MHz / 28 V POUT = 25 W EFF. = 29 ...
View more extracted text
ATERAL MOSFETs • IS-95 CDMA: 865-895 MHz / 28 V POUT = 25 W EFF. = 29 % • EDGE: 920-960 MHz / 28 V POUT = 45 W EFF. = 38 % • GSM: 920-960 MHz / 28 V POUT = 135 W EFF. = 51 % • EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION 1 ORDER CODE LET9130 M265 epoxy sealed BRANDING LET9130 PIN CONNECTION DESCRIPTION The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source
LET9130 Datasheet
