STMicroelectronics LET9150
The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz.FEATURES
● Excellent thermal stability● Common source configuration push-pull
● POUT = 150 W with 20 dB gain @ 860 MHz
● BeO-free package
DESCRIPTION
M246 Epoxy sealed Figure 1. Pin connection 12 1-2 Drain 4-5 Gate 5 4 3 Source Table 1. Device summary Order code LET9150 Package M246 December 2010 Doc ID 16369 Rev 6 Branding LET9150 1/12 12 Contents Contents LET9150 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .