STMicroelectronics LFTVS18-1F3
The LFTVS18-1F3 is a single line diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electronics devices subject to ESD and EOS transient overvoltages.FEATURES
● Strong ESD and EOS protection● Very low clamping factor VCL/VBR
● Unidirectional device
● Fast response time
● Very thin package
● Very small PCB area
● RoHS compliant Complies with the following standards:
● IEC 61000-4-2 level 4 – ±15 kV (air discharge) – ±8 kV (contact discharge)
DESCRIPTION
Datasheet production data Flip Chip (4 bumps) Figure 1. Pin configuration (bump side) AB 1 2 Figure 2. Device configuration A1 and A2 B1 and B2 September 2012 This is information on a product in full production. TM: Transil is a trademark of STMicroelectronics Doc ID 14608 Rev 3 1/8 8 Characteristics 1 Characteristics LFTVS18-1F3 Table 1. Symbol Absolute maximum ratings (Tamb = 25 °C) Parameter Test condition Value Unit PPP Peak pulse power dissipation (8/20 µs pulse) Tj initial = Tamb 350 W IFSM Non repetitive surge peak forward current tp = 10 ms, Tj initial = Tamb 5 A Tj Maximum operating junction temperature Tstg Storage temperature range 125 °C -55 to +150 °C Figure 3. Electri...