STMicroelectronics M27V400
M27V400 is replaced by the M27W400 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Stand-by Current 20µA 40 40 s s s s 1 1 FDIP40W (F) PDIP40 (B) s s s PROGRAMMING VOLTAGE: 12.5V ± 0.25V PROGRAMMING TIME: 50µs/word ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: B8h Figure 1. It is ideally suited for microprocessor systems requiring large data or program storage. It is organised as either 512 Kwords of 8 bit or 256 Kwords of 16 bit.| Part No. | M27V400 |
|---|---|
| Datasheet | M27V400 Download |
| Manufacturer |  STMicroelectronics |
| Description | 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM |
| Buy | Stock & Price |
DESCRIPTION
The M27V400 is an 4 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). The pin-out is compatible with the most common 4 Mbit Mask ROM. The FDIP40W (window ceramic frit-seal package) has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written rapidly to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27V400 is offered in PDIP40 package. VCC 18 A0-A17 15 Q15A–1 Q0-Q14 E G BYTEVPP M27C400 VSS AI01634 July 2000 This is information on a product still in production but not recommended for new designs. 1/14 M27V400 Figure 2. DIP Connections A17 A7 A6 A5 A4 A3 A2 A1 A0 E VSS G Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 1 40 2 39 3 38 4 37 5 36 6 35 7 34 33 8 32 9 31 10 M27C400 30 11 29 12 28 13 27 14 26 15 25 16 17 24 18 23 19 22 20 21 AI01635 Table 1. Signal Names A0-A17 Add...
