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M27W801 - 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM

General Description

The M27W801 is a low voltage 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable).

It is ideally suited for microprocessor systems requiring large data or program storage and is organized as 1,048,576 by 8 bits.

Key Features

  • a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most efficient use of these two control lines, E should be decoded and used as the primary device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This en.

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Other Datasheets by STMicroelectronics

Part Number Description
M27W800 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM
M27W016 16 Mbit 1Mb x16 3V Supply FlexibleROM Memory
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M27W801 8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: – 80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V 32 s 32 s s PIN COMPATIBLE with M27C801 LOW POWER CONSUMPTION: – 15µA max Standby Current – 15mA max Active Current at 5MHz 1 1 FDIP32W (F) PDIP32 (B) s s PROGRAMMING TIME 50µs/byte HIGH RELIABILITY CMOS TECHNOLOGY – 2,000V ESD Protection – 200mA Latchup Protection Immunity PLCC32 (K) TSOP32 (N) 8 x 20 mm s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 42h Figure 1. Logic Diagram DESCRIPTION The M27W801 is a low voltage 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable).