M29DW323DB Datasheet | STMicroelectronics

FEATURES SUMMARY s SUPPLY VOLTAGE - VCC = 2.7V to 3.6V for Program, Erase and Read - VPP =12V for Fast Program (optional) s ACCESS TIME: 70, 90ns s PROGRAMMING TIME - 10µs per Byte/Word typical - Double Word/ Quadruple Byte Program s MEMORY BLOCKS - Dual Bank Memory Array: 8Mbit+24Mbit - Parameter Blocks (Top or Bottom Location) s DUAL OPERATIONS - Read in one bank while Program or Erase in other s ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM MAND - Faster Production/Batch Programming s VPP/WP PIN for FAST PROGRAM and WRITE PROTECT s TEMPORARY BLOCK UNPROTECTION MODE s MON FLASH INTERFACE - 64 bit Security Code s EXTENDED MEMORY BLOCK - Extra block used as security block or to store additional information s LOW POWER CONSUMPTION - Standby and Automatic Standby s 100,000...