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M29W116BT Datasheet 16 Mbit Low Voltage Single Supply Flash Memory

Manufacturer: STMicroelectronics

Overview: M29W116BT M29W116BB 16 Mbit (2Mb x8, Boot Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 70ns s PROGRAMMING TIME – 10µs by Byte typical s 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks s PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s TEMPORARY BLOCK UNPROTECTION MODE s SECURITY MEMORY BLOCK s UNLOCK BYPASS PROGRAM MAND – Faster Production/Batch Programming s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – M29W116BT Device Code: C7h – M29W116BB Device Code: 4Ch TSOP40 (N) 10 x 20mm Figure 1. Logic Diagram VCC 21 A0-A20 8 DQ0-DQ7 W E M29W116BT M29W116BB G RB RP VSS AI02972 July 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/20 M29W116BT, M29W116BB Figure 2. TSOP Connections A16 1 40 A17 A15 VSS A14 A20 A13 A19 A12 A10 A11 DQ7 A9 DQ6 A8 DQ5 W DQ4 RP 10 M29W116BT 31 VCC NC 11 M29W116BB 30 VCC RB NC A18 DQ3 A7 DQ2 A6 DQ1 A5 DQ0 A4 G A3 VSS A2 E A1 20 21 A0 AI02973 Table 1.

General Description

The M29W116B is a 16Mbit (2Mb x8) non-volatile memory that can be read, erased and reprogrammed.

These operations can be performed using a single low voltage (2.7 to 3.6V) suppl

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