STMicroelectronics M36L0R7050
128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM
| Part No. | M36L0R7050 |
|---|---|
| Datasheet | M36L0R7050 Download |
| Manufacturer |  STMicroelectronics |
| Description | 128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM |
| Buy | Stock & Price |
FEATURES
SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Asynchronous Pseudo SRAM● SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7 to 1.95V – VPPF = 9V for fast program (12V tolerant)
● ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top Flash Configuration) M36L0R7050T0: 88C4h – Device Code (Bottom Flash Configuration) M36L0R7050B0: 88C5h
● PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions FLASH MEMORY
● SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85ns
● SYNCHRONOUS BURST READ SUSPEND
● PROGRAMMING TIME – 10µs typical Word program time using Buffer Program
● MEMORY ORGANIZATION – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location)
● DUAL OPERATIONS – program/erase in one Bank while read in others – No delay between read and write operations
● SECURITY – 64 bit unique device number – 2112 bit user programmable OTP Cells
● Figure 1.
