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STMicroelectronics datasheets

M36L0R8060B1 Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Flash Memory ponent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PSRAM ponent. . . . . . . . . . . . . . .

M36L0R8060B1 Key Features

  • 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
  • 1 die of 64 Mbit (4Mb x16) Pseudo SRAM
  • SUPPLY VOLTAGE
  • VDDF = VCCP = VDDQF = 1.7 to 1.95V
  • VPPF = 9V for fast program (12V tolerant)
  • ELECTRONIC SIGNATURE
  • Manufacturer Code: 20h
  • Top Device Code M36L0R8060T1: 880Dh
  • Bottom Device Code M36L0R8060B1: 880Eh
  • PACKAGE