STMicroelectronics M36L0R8060T1
Multi-Chip Package
| Part No. | M36L0R8060T1 |
|---|---|
| Datasheet | M36L0R8060T1 Download |
| Manufacturer |  STMicroelectronics |
| Description | Multi-Chip Package |
| Buy | Stock & Price |
FEATURES
SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 64 Mbit (4Mb x16) Pseudo SRAM● SUPPLY VOLTAGE – VDDF = VCCP = VDDQF = 1.7 to 1.95V – VPPF = 9V for fast program (12V tolerant)
● ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M36L0R8060T1: 880Dh – Bottom Device Code M36L0R8060B1: 880Eh
● PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions FLASH MEMORY
● SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85ns
● SYNCHRONOUS BURST READ SUSPEND
● PROGRAMMING TIME – 10µs typical Word program time using Buffer Enhanced Factory Program command
● MEMORY ORGANIZATION – Multiple Bank Memory Array: 16 Mbit Banks – Parameter Blocks (Top or Bottom location)
● DUAL OPERATIONS – program/erase in one Bank while read in others – No delay between read and write operations
● SECURITY – 64 bit unique device number – 2112 bit user programmable OTP Cells
● Figure 1.
