STMicroelectronics M36L0T7050T0
128Mbit Flash Memory 32Mbit PSRAM
FEATURES
SUMMARY MULTI-CHIP PACKAGE – 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32Mbit (2Mx16) Pseudo SRAM● SUPPLY VOLTAGE – VDDF = 1.7 to 2V – VDDP = VDDQ = 2.7 to 3.3V – VPP = 9V for fast program (12V tolerant)
● ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top Flash Configuration) M36L0T7050T0: 88C4h – Device Code (Bottom Flash Configuration) M36L0T7050B0: 88C5h
● PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions FLASH MEMORY
● SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 50MHz – Asynchronous Page Read mode – Random Access: 90ns
● SYNCHRONOUS BURST READ SUSPEND
● PROGRAMMING TIME – 10µs typical Word program time using Write to Buffer and Program
● MEMORY ORGANIZATION – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location)
● DUAL OPERATIONS – program/erase in one Bank while read in others – No delay between read and write operations
● SECURITY – 64 bit unique device number – 2112 bit user programmable OTP Cells
● Figure 1.