FEATURES
SUMMARY s SUPPLY VOLTAGE – VDDF = 1.65V to 2.2V – VDDS = VDDQF = 2.7V to 3.3V – VPPF = 12V for Fast Program (optional) s ACCESS TIME: 70, 85, 100ns s LOW POWER CONSUMPTION s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M36WT864TF: 8810h – Bottom Device Code, M36WT864BF: 8811h FLASH MEMORY s PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options s MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) s DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations s BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WP for Block Lock-Down s SECURITY – 128 bit user programmable OTP cells – 64 bit unique device number – One parameter block permanently lockable s COMMON FLASH INTERFACE (CFI) s 100,000 PROGRAM/ERASE CYCLES per BLOCK SRAM s 8 Mbit (51...
STMicroelectronics
