M36WT864TF
FEATURES
SUMMARY s SUPPLY VOLTAGE
- VDDF = 1.65V to 2.2V
- VDDS = VDDQF = 2.7V to 3.3V
- VPPF = 12V for Fast Program (optional) s ACCESS TIME: 70, 85, 100ns s LOW POWER CONSUMPTION s ELECTRONIC SIGNATURE
- Manufacturer Code: 20h
- Top Device Code, M36WT864TF: 8810h
- Bottom Device Code, M36WT864BF: 8811h
FLASH MEMORY s PROGRAMMING TIME
- 8µs by Word typical for Fast Factory Program
- Double/Quadruple Word Program option
- Enhanced Factory Program options s MEMORY BLOCKS
- Multiple Bank Memory Array: 4 Mbit Banks
- Parameter Blocks (Top or Bottom location) s DUAL OPERATIONS
- Program Erase in one Bank while Read in others
- No delay between Read and Write operations s BLOCK LOCKING
- All blocks locked at Power up
- Any bination of blocks can be locked
- WP for Block Lock-Down s SECURITY
- 128 bit user programmable OTP cells
- 64 bit unique device number
- One parameter block permanently lockable s MON FLASH INTERFACE (CFI) s 100,000 PROGRAM/ERASE CYCLES per BLOCK
SRAM s 8 Mbit (512K x...
