M48T08Y Datasheet | STMicroelectronics

Features - Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery - BYTEWIDE™ RAM-like clock access - BCD coded year, month, day, date, hours, minutes, and seconds - Typical clock accuracy of ±1 minute a month, at 25 °C - Automatic power-fail chip deselect and WRITE protection - WRITE protect VPFD = power-fail deselect voltage): - M48T08: VCC = 4.75 to 5.5 V; 4.5 V ≤ VPFD ≤ 4.75 V - M48T18/T08Y: VCC = 4.5 to 5.5 V; 4.2 V ≤ VPFD ≤ 4.5 V - Software controlled clock calibration for high accuracy applications - Self-contained battery and crystal in the CAPHAT™ DIP package - Packaging includes a 28-lead SOIC and SNAPHAT® top (to be ordered separately) - SOIC package provides direct connection for a snaphat top which contains the battery and crystal - Pin and function patible with DS1643 and JEDEC standard 8 K x 8 SRAMs - Ro HS pliant - Lead-free second level interconnect 28 1 PCDIP28 battery/crystal CAPHAT™ SNAPHAT® battery/crystal 28 1 SOH28 June 2011 Doc ID 2411 Rev 11 1/31 .st. Contents Contents M48T08, M48T08Y, M48T18 1 Description - - - - - - - - - . . . . 5 2 Operation modes - - - - - - - - . . . . 8 2.1 READ...