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M48Z2M1V - 16 Mbit (2 Mb x 8) ZEROPOWER SRAM

Download the M48Z2M1V datasheet PDF. This datasheet also covers the M48Z2M1Y variant, as both devices belong to the same 16 mbit (2 mb x 8) zeropower sram family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • Integrated, ultra low power SRAM, power-fail control circuit, and batteries.
  • Conventional SRAM operation; unlimited )WRITE cycles t(s.
  • 10 years of data retention in the absence of cpower du.
  • Automatic power-fail chip deselect and WRITE roprotection P.
  • WRITE protect voltages te(VPFD = power-fail deselect voltage): le.
  • M48Z2M1Y: VCC = 4.5 to 5.5 V; 4.2 V ≤ VPFD ≤ 4.5 V so.
  • M48Z2M1V: VCC = 3.0 to 3.6 V; b2.8 V ≤ VPFD ≤ 3.0 V O.
  • Batteries are internally.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M48Z2M1Y_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited )WRITE cycles t(s■ 10 years of data retention in the absence of cpower du■ Automatic power-fail chip deselect and WRITE roprotection P■ WRITE protect voltages te(VPFD = power-fail deselect voltage): le– M48Z2M1Y: VCC = 4.5 to 5.5 V; 4.2 V ≤ VPFD ≤ 4.5 V so– M48Z2M1V: VCC = 3.0 to 3.6 V; b2.8 V ≤ VPFD ≤ 3.