STMicroelectronics M58LR128FB
Flash Memory
| Part No. | M58LR128FB |
|---|---|
| Datasheet | M58LR128FB Download |
| Manufacturer |  STMicroelectronics |
| Description | Flash Memory |
| Buy | Stock & Price |
FEATURES
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● SUPPLY VOLTAGE Figure 1. Package – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ FBGA – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85, 95ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 10µs typical Word program time using Buffer Program VFBGA56 (ZB) MEMORY ORGANIZATION 7.7 x 9mm – Multiple Bank Memory Array: 8 Mbit Banks DataSheet4U.com – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS
● ELECTRONIC SIGNATURE – program/erase in one Bank while read in – Manufacturer Code: 20h others – Top Device Code: 88C4h. – No delay between read and write – Bottom Device Code: 88C5h operations BLOCK LOCKING – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WP for Block Lock-Down – Absolute Write Protection with VPP = VSS SECURITY – 64 bit unique device numb...
