STMicroelectronics M58LW032D
32 Mbit 4Mb x8 / 2Mb x16 / Uniform Block 3V Supply Flash Memory
FEATURES
SUMMARY s WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations s ACCESS TIME – Random Read 90ns,110ns – Page Mode Read 90ns/25ns, 110ns/25ns TSOP56 (N) 14 x 20 mm s PROGRAMMING TIME – 16 Word Write Buffer – 12µs Word effective programming time TBGA s 32 UNIFORM 64 KWord/128KByte MEMORY BLOCKS ENHANCED SECURITY – Block Protection/ Unprotection – VPEN signal for Program Erase Enable – 128 bit Protection Register with 64 bit Unique Code in OTP area TBGA64 (ZA) 10 x 13 mm s s s s s PROGRAM and ERASE SUSPEND 128 bit PROTECTION REGISTER COMMON FLASH INTERFACE 100, 000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code M58LW032D: 0016h s September 2003 1/51 M58LW032D TABLE OF CONTENTS SUMMARYDESCRIPTION
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .