M58LW064A Datasheet PDF

M58LW064A M58LW064B 64 Mbit (x16 and x16/x32, Block Erase) Low Voltage Flash Memories PRODUCT PREVIEW s M58LW064A x16 organisation, s M58LW064B x16/x32 selectable s MULTI-BIT CELL for HIGH DENSITY and LOW COST s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Supply Voltage – VDDQ = 2.7V to 3.6V or 1.8V to 2.5V Input/Output Supply Voltage s PIPELINED SYNCHRONOUS BURST INTERFACE s SYNCHRONOUS/ASYNCHRONOUS READ – Synchronous Burst read – Asynchronous Random and Latch Enabled Controlled Read, with Page Read s ACCESS TIME – Synchronous Burst Read up to 66MHz – Asynchronous Page Mode Read 150/25ns, Random Read 150ns s PROGRAMMING TIME – 16 Word or 8 Double-Word Write Buffer – 12us Word effective programming time s MEMORY BLOCKS – 64 Equal blocks of 1 Mbit s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code M58LW064A: 17h – Device Code M58LW064B: 14h TSOP56 (NF) 86 1 TSOP86 II (NH) PQFP80 (T) FBGA LBGA54 (ZA) Figure 1. Logic Diagram VDD VDDQ 22 A1-A22 VPP 32 DQ0