M58LW064A
M58LW064A M58LW064B
64 Mbit (x16 and x16/x32, Block Erase) Low Voltage Flash Memories
PRODUCT PREVIEW s M58LW064A x16 organisation, s M58LW064B x16/x32 selectable s MULTI-BIT CELL for HIGH DENSITY and LOW
COST s SUPPLY VOLTAGE
- VDD = 2.7V to 3.6V Supply Voltage
- VDDQ = 2.7V to 3.6V or 1.8V to 2.5V
Input/Output Supply Voltage s PIPELINED SYNCHRONOUS BURST
INTERFACE s SYNCHRONOUS/ASYNCHRONOUS READ
- Synchronous Burst read
- Asynchronous Random and Latch Enabled
Controlled Read, with Page Read s ACCESS TIME
- Synchronous Burst Read up to 66MHz
- Asynchronous Page Mode Read 150/25ns,
Random Read 150ns s PROGRAMMING TIME
- 16 Word or 8 Double-Word Write Buffer
- 12us Word effective programming time s MEMORY BLOCKS
- 64 Equal blocks of 1 Mbit s ELECTRONIC SIGNATURE
- Manufacturer Code: 20h
- Device Code M58LW064A: 17h
- Device Code M58LW064B: 14h
TSOP56 (NF)
TSOP86 II (NH)
PQFP80 (T)
FBGA
LBGA54 (ZA)
Figure 1. Logic Diagram
VDD VDDQ
22 A1-A22
32...
