STMicroelectronics M58LW64D
64 Mbit (8Mb x8 / 4Mb x16 / Uniform Block) 3V Supply Flash Memory
FEATURES
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● WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ACCESS TIME – Random Read 110ns – Page Mode Read 110/25ns PROGRAMMING TIME – 16 Word Write Buffer – 12µs Word effective programming time 64 UNIFORM 64 KWord/128KByte MEMORY BLOCKS ENHANCED SECURITY – Block Protection/ Unprotection – VPEN signal for Program Erase Enable – 128 bit Protection Register with 64 bit Unique Code in OTP area PROGRAM and ERASE SUSPEND COMMON FLASH INTERFACE 100, 000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code M58LW064D: 0017h PACKAGES – Compliant with Lead-Free Soldering Processes – Lead-Free Versions Figure 1. Packages TSOP56 (N) 14 x 20 mm TBGA TBGA64 (ZA) 10 x 13 mm September 2004 1/50 M58LW064D TABLE OF CONTENTS
FEATURES
SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1.