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M58MR064D Datasheet PDF

STMicroelectronics M58MR064D

The M58MR064 is a 64 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally. The device supports synchronous burst read and asynchronous read from all the blocks of the memory array; at power-up the device is configured for page mode read.
Part No. M58MR064D
Datasheet M58MR064D Download
Manufacturer
STMicroelectronics
Description 64 Mbit 4Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
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M58MR064D datasheet page 1 preview

DESCRIPTION

In synchronous burst mode, a new data is output at each clock cycle for frequencies up to 54MHz. The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against programming and erase at Power-up. Blocks can be unprotected to make changes in the application and then re-protected. A parameter block "Security block" can be permanently protected against programming and erasing in order to increase the data security. An optional 12V VPP power supply is provided to speed up the program phase at costumer production. An internal command interface (C.I.) decodes the instructions to access/modify the memory content. The program/erase controller (P/E.C.) automatically executes the algorithms taking care of the timings necessary for program and erase operations. Two status registers indicate the state of each bank. Instructions for Read Array, Read Electronic Signature, Read Status Register, Clear Status Reg...
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