M58WR032ET Datasheet PDF

FEATURES

SUMMARY
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● SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 80, 100ns PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WP for Block Lock-Down SECURITY – 128 bit user programmable OTP cells – 64 bit unique device number – One parameter block permanently lockable COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK Figure 1. Package FBGA VFBGA...