M58WR032KL Datasheet PDF

FEATURES

● Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 86 MHz – Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time – 10 µs by Word typical for Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options Memory blocks – Multiple Bank memory array: 4 Mbit Banks – Parameter Blocks (top or bottom location) Dual operations – Program Erase in one Bank while Read in others – No delay between Read and Write operations Block locking – All blocks locked at Power up – Any combination of blocks can be locked – WP for Block Lock-Down Security – 128 bit user programmable OTP cells – 64 bit unique device number Common Flash Interface (CFI) 100,000 program/erase cycles per block
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● FBGA
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● VFBGA44 (ZA) 7.5 × 5 mm
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● Electronic signature – Manufacturer Code: 20h – Top D...