M58WR064HB Datasheet PDF

FEATURES

● Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2.24 V for I/O buffers – VPP = 12 V for fast program (optional) Synchronous/asynchronous read – Synchronous burst read mode: 66 MHz – Asynchronous/synchronous page read mode – Random access: 60 ns, 70 ns Synchronous burst read suspend Programming time – 8 µs by word typical for fast factory program – Double/quadruple word program option – Enhanced factory program options Memory blocks – Multiple bank memory array: 4 Mbit banks – Parameter blocks (top or bottom location) Dual operations – Program erase in one bank while read in others – No delay between read and write operations Block locking – All blocks locked at power-up – Any combination of blocks can be locked – WP for block lock-down Security – 128 bit user programmable OTP cells – 64 bit unique device number Common Flash interface (CFI) 100 000 program/erase cycles per block
● FBGA
● VFBGA56 (ZB) 7.7 x 9 mm
●
●
● Electronic signature – Ma...