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M59BW102 Datasheet PDF

STMicroelectronics M59BW102

The M59BW102 is a non-volatile memory that may be erased electrically at the chip level and programmed in-system on a Word-by-Word basis using only a single 3V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
Part No. M59BW102
Datasheet M59BW102 Download
Manufacturer
STMicroelectronics
Description 1 Mbit 64Kb x16 / Burst Low Voltage Flash Memory
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M59BW102 datasheet page 1 preview

DESCRIPTION

The device can be programmed and erased over 100,000 cycles. Instructions for Read/Reset, Auto Select for reading the Electronic Signature, Programming and Chip Erase are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings. The M59BW102 features an interleaved access modality which allows extremely fast access time. The device is offered in TSOP40 (10 x 14mm) package. Figure 1. Logic Diagram VCC 16 A0-A15 W E G ALE M59BW102 16 DQ0-DQ15 VSS AI02763B March 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/24 M59BW102 Figure 2. TSOP Connections Table 1. Signal Names A0-A15 DQ0-DQ7 Address Inputs Data Inputs/Outputs, Command Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Address Latch Enable Supply Voltage Ground Not Connected Internally A9 A10 A11 A12 A13 A14 A15 ALE W VCC NC E DQ15 DQ14 DQ13 DQ12 DQ11 DQ...
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