M59DR016D Datasheet PDF

M59DR016C M59DR016D 16 Mbit (1Mb x16, Dual Bank, Page) 1.8V Supply Flash Memory PRODUCT PREVIEW s SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.2V for Program, Erase and Read – VPP = 12V for fast Program (optional) s ASYNCHRONOUS PAGE MODE READ – Page Width: 4 words – Page Access: 35ns – Random Access: 100ns s PROGRAMMING TIME – 10µs by Word typical – Double Word Programming Option s MEMORY BLOCKS – Dual Bank Memory Array: 4 Mbit - 12 Mbit – Parameter Blocks (Top or Bottom location) s DUAL BANK OPERATIONS – Read within one Bank while Program or Erase within the other – No delay between Read and Write operations s BLOCK PROTECTION/UNPROTECTION – All Blocks protected at Power Up – Any combination of Blocks can be protected s COMMON FLASH INTERFACE (CFI) s 64 bit SECURITY CODE s ERASE SUSPEND and RESUME MODES s 100,000 PROGRAM/ERASE CYCLES per BLOCK s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M59DR016C: 2293h – Bottom Device Code, M59DR0