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M59DR032A Datasheet PDF

STMicroelectronics M59DR032A

The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V V DD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally. The device supports asynchronous page mode from all the blocks of the memory array.
Part No. M59DR032A
Datasheet M59DR032A Download
Manufacturer
STMicroelectronics
Description 32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory
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M59DR032A datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(1) Symbol TA TBIAS TSTG VIO (3) VDD, VDDQ VPP Parameter Ambient Operating Temperature (2) Temperature Under Bias Storage Temperature Input or Output Voltage Supply Voltage Program Voltage Value –40 to 85 –40 to 125 –55 to 155 –0.5 to VDDQ+0.5 –0.5 to 2.7 –0.5 to 13 Unit °C °C °C V V V Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "

ABSOLUTE MAXIMUM RATINGS

" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Depends on range. 3. Minimum Voltage may undershoot to –2V during transition and for less than 20ns.

DESCRIPTION

The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks.
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