STMicroelectronics M65KA128AE
M65KA128AE IS ONLY AVAILABLE AS PART OF A MULTIPLE MEMORY PRODUCT August 2006 Rev 1 1/53 1 Contents M65KA128AE Contents 1 2 Summary description .| Part No. | M65KA128AE |
|---|---|
| Datasheet | M65KA128AE Download |
| Manufacturer |  STMicroelectronics |
| Description | Low Power SDRAM |
| Buy | Stock & Price |
FEATURES
summary● 128Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2MWords, each 16 bits wide Synchronous Burst Read and Write – Fixed Burst Lengths: 1, 2, 4, 8 Words or Full Page – Burst Types: Sequential and Interleaved. – Maximum Clock frequency: 133MHz – Clock Valid to Output Delay (CAS Latency): 3 at maximum clock frequency – Burst Control by Burst Stop and Precharge Command
●
● Supply Voltage – VDD = VDDQ = 1.7 to 1.95V Automatic and controlled Precharge Byte control by LDQM and UDQM Low-power features: – Partial Array Self Refresh (PASR), – Automatic Temperature Compensated Self Refresh (TCSR) – Driver Strength (DS) – Deep Power-Down Mode Auto Refresh and Self Refresh LVCMOS Interface compatible with multiplexed addressing Operating temperature range – − 25 to 90°C Wafer
●
●
●
●
●
● . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 2.2 2.3 2.4 2.5 Address Inputs (A0-A11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
