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M93C46-DRE - EEPROM

General Description

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Key Features

  • Industry standard.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M93Cx6-DRE 16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide) MICROWIRE™ serial EEPROM 105 °C operation Datasheet - production data SO8 (MN) 150 mil width TSSOP8 (DW) 169 mil width WFDFPN8 (MF) DFN8 - 2 x 3 mm Features • Industry standard MICROWIRE™ bus • Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb • Dual organization: by word (x16) or byte (x8) • Write – Byte within 4 ms – Word within 4 ms • READY/BUSY signal during programming • 2 MHz clock rate • Sequential read operation • Single supply voltage: 1.7 V to 5.5 V • Extended temperature range: -40 °C up to 105 °C • Enhanced ESD protection • Write cycle endurance – 4 million Write cycles at 25 °C – 1.