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M93C76-DRE - EEPROM

Download the M93C76-DRE datasheet PDF. This datasheet also covers the M93C46-DRE variant, as both devices belong to the same eeprom family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • Industry standard.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M93C46-DRE-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M93Cx6-DRE 16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide) MICROWIRE™ serial EEPROM 105 °C operation Datasheet - production data SO8 (MN) 150 mil width TSSOP8 (DW) 169 mil width WFDFPN8 (MF) DFN8 - 2 x 3 mm Features • Industry standard MICROWIRE™ bus • Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb • Dual organization: by word (x16) or byte (x8) • Write – Byte within 4 ms – Word within 4 ms • READY/BUSY signal during programming • 2 MHz clock rate • Sequential read operation • Single supply voltage: 1.7 V to 5.5 V • Extended temperature range: -40 °C up to 105 °C • Enhanced ESD protection • Write cycle endurance – 4 million Write cycles at 25 °C – 1.