M93S66 Datasheet PDF | STMicroelectronics

STMicroelectronics M93S66

the M93S66), or continuously as the address counter automatically rolls over to 00h when the highest address is reached. the whole memory may also be erased, or set to a predetermined pattern, by using the Write All instruction. The size of this area is defined by the content of a Protection Register, located outside of the memory array.

Part No.	M93S66
Datasheet	M93S66 Download
Manufacturer	STMicroelectronics
Description	4Kbit / 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
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FEATURES

SUMMARY s Industry Standard MICROWIRE Bus s Figure 1. Packages Single Supply Voltage: – 4.5V to 5.5V for M93Sx6 – 2.5V to 5.5V for M93Sx6-W – 1.8V to 5.5V for M93Sx6-R 8 1 PDIP8 (BN) s s Single Organization: by Word (x16) Programming Instructions that work on: Word or Entire Memory Self-timed Programming Cycle with Auto-Erase User Defined Write Protected Area Page Write Mode (4 words) Ready/Busy Signal During Programming Speed: – 1MHz Clock Rate, 10ms Write Time (Current product, identified by process identification letter F or M) – 2MHz Clock Rate, 5ms Write Time (New Product, identified by process identification letter W) s s s s s 8 1 SO8 (MN) 150 mil width s s s s Sequential Read Operation Enhanced ESD/Latch-Up Behavior More than 1 Million Erase/Write Cycles More than 40 Year Data Retention TSSOP8 (DS) 3x3mm body size TSSOP8 (DW) 169 mil width May 2003 1/32 M93S66, M93S56, M93S46 SUMMARY

DESCRIPTION

This specification covers a range of 4K, 2K, 1K bit serial Electrically Erasable Programmable Memory (EEPROM) products (respectively for M93S66, M93S56, M93S46).