M95512-DF
Description
1 Description The M95512 devices are electrically erasable programmable memories (EEPROMs) organized as 65536 x 8 bits, accessed through the SPI bus.
Key Features
- Memory array
- 512-Kbit (64-Kbyte) of EEPROM - Page size: 128 bytes - Additional write lockable page (Identification page)
- Write time - Byte Write within 5 ms - Page Write within 5 ms
- Write protect - quarter array - half array - whole memory array
- High-speed clock: 16 MHz
- Single supply voltage: - 2.5 V to 5.5 V for M95512-W - 1.8 V to 5.5 V for M95512-R - 1.7 V to 5.5 V for M95512-DF
- Operating temperature range: from -40 °C up to +85 °C
- Enhanced ESD protection
- More than 4 million Write cycles
- More than 200-year data retention
