STMicroelectronics MD1803DFX
The MD1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.| Part No. | MD1803DFX |
|---|---|
| Datasheet | MD1803DFX Download |
| Manufacturer |  STMicroelectronics |
| Description | High voltage NPN Power transistor |
| Buy | Stock & Price |
FEATURES
● State-of-the-art technology: – Diffused collector “enhanced generation”● More stable performance versus operating temperature variation
● Low base drive requirement
● Tighter hFE range at operating collector current
● Fully insulated power package U.L. compliant
● Integrated free wheeling diode
● In compliance with the 2002/93/EC european directive
APPLICATIONS
● Horizontal deflection output for TVDESCRIPTION
3 2 1 ISOWATT218FX Internal schematic diagram RBE=60Ω typ. Order codes Part number MD1803DFX Marking MD1803DFX Package ISOWATT218FX Packing TUBE September 2006 Rev 6 1/10 10 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter VCES VCEO VEBO IC ICM IB PTOT Visol Tstg TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Total dissipation at Tc = 25°C Insulation withstand voltage (rms) from all three leads to external heatsink Storage temperature Max. operating junction temperature Table 2.
