STMicroelectronics MD2009DFX
The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.| Part No. | MD2009DFX |
|---|---|
| Datasheet | MD2009DFX Download |
| Manufacturer |  STMicroelectronics |
| Description | High voltage NPN Power transistor |
| Buy | Stock & Price |
APPLICATIONS
● Internal schematic diagram Horizontal deflection output for TVDESCRIPTION
RBE=60Ω typ. Order codes Part number MD2009DFX Marking MD2009DFX Package ISOWATT218FX Packaging Tube October 2006 Rev 4 1/10 10 Electrical ratings MD2009DFX 1 Electrical ratings Table 1. Symbol VCES VCEO VEBO IC ICM IB PTOT Visol Tstg TJ Absolute maximum ratings Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Base-emitter voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Total dissipation at Tc = 25°C Insulation withstand voltage (RMS) from all three leads to external heatsink Storage temperature Max. operating junction temperature Value 1500 700 7 10 16 6 58 2500 -65 to 150 150 Unit V V V A A A W V °C Table 2. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case max Value 2.15 Unit °C/W 2/10 MD2009DFX Electrical characteristics 2 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 3. Symbol ICES IEBO Electrical characteristics Parameter Collector cut-off current (VBE = 0) Test conditions VCE = 1500V VCE = 1500V, Tc= 125°C 40 Min.
