STMicroelectronics MD2103DFP
The MD2103DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency briging updated performance to the horizontal deflection stage.| Part No. | MD2103DFP |
|---|---|
| Datasheet | MD2103DFP Download |
| Manufacturer |  STMicroelectronics |
| Description | High voltage NPN power transistor |
| Buy | Stock & Price |
FEATURES
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● State-of-the-art technology: – Diffused collector “enhanced generation” Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current Fully insulated power package UL compliant Integrated free wheeling diode TO-220FP 1 2 3
APPLICATIONS
● Horizontal deflection output for TV Figure 1. Internal schematic diagramDESCRIPTION
RBE=65Ω (typ) Table 1. Device summary Marking MD2103DFP Package TO-220FP Packing Tube Order code MD2103DFP May 2008 Rev 1 1/9 9 Electrical ratings MD2103DFP 1 Electrical ratings Table 2. Symbol VCES VCEO VEBO IC ICM IB Ptot VINS Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (VBE =0) Collector-emitter voltage (IB =0) Emitter-base voltage (IC =0) Collector current Collector peak current (tP < 5ms) Base current Total dissipation at Tc ≤25°C Insulation withstand voltage (RMS) from all three leads to external heatsink Storage temperature Max. operating junction temperature Value 1500 700 7 6 9 3 38 1500 -65 to 150 150 Unit V V V A A A W V °C °C Table 3.
