STMicroelectronics MJ3001
This publication supersedes and replaces all information previously supplied.| Part No. | MJ3001 |
|---|---|
| Datasheet | MJ3001 Download |
| Manufacturer |  STMicroelectronics |
| Description | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Buy | Stock & Price |
DESCRIPTION
te cThe MJ2501 is a Silicon Epitaxial-Base PNP le upower transistors in monolithic Darlington dconfiguration, mounted in Jedec TO-3 metal so rocase. It is intented for use in power linear and b Pswitching applications. ) - O leteThe complementary NPN type is the MJ3001. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM bsolete PPrroodduucctt((ss) - ObsoABSOLUTEMAXIMUM RATINGS
O teSymbol Parameter ObsoleVCBO Collector-base Voltage (IE = 0) R1 Typ. = 10 KΩ R2 Typ. = 150 Ω PNP NPN Value MJ2501 MJ3001 80 Unit V VCEO Collector-emitter Voltage (IB = 0) 80 V VEBO Emitter-base Voltage (IC = 0) 5V IC Collector Current 10 A IB Base Current 0.2 A Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature 150 -65 to 200 200 W oC oC For PNP types voltage and current values are negative. September 2003 1/4 MJ2501 / MJ3001 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.17 oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min.
