STMicroelectronics MJ802
The MJ802 is a silicon Epitaxial-Base power )transistor mounted in Jedec TO-3 metal case. It t(sis intended for general purpose power amplifier Producand switching applications.DESCRIPTION
1 2 TO-3 - ObsoleteINTERNAL SCHEMATIC DIAGRAM Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VCEO Collector-emitter Voltage (IB = 0) VCBO Collector-base Voltage (IE = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current IB Base Current Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature Value 90 100 4 30 7.5 200 -65 to 200 200 Unit V V V A A W oC oC October 2003 1/4 MJ802 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.875 oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 100 V VCB = 10