STMicroelectronics MJB32B
The MJB32B is manufactured using Epitaxial-base Technology for use in medium power linear and switching applications.| Part No. | MJB32B |
|---|---|
| Datasheet | MJB32B Download |
| Manufacturer |  STMicroelectronics |
| Description | PNP SILICON POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
1 D2PAK (TO-263) (Suffix "T4") INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case ≤ 25 C T amb ≤ 25 o C Storage Temperature Max. Operating Junction Temperature o Value -80 -80 -5 -3 -5 -1 40 2 -65 to 150 150 Unit V V V A A A W W o o C C June 2001 1/5 MJB32B THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 62.5 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CEO I CES I EBO Parameter Collector Cut-off Current (I B = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = -60 V V CE = -80 V V EB = -5 V I C = -30 mA -80 Min. Typ. Max. -50 -20 -0.1 Unit µA µA mA V V CEO(sus) ∗ Collector-Emi...
