STMicroelectronics MJB44H11
This device is an NPN transistor manufactured using new low voltage planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage.| Part No. | MJB44H11 |
|---|---|
| Datasheet | MJB44H11 Download |
| Manufacturer |  STMicroelectronics |
| Description | Low voltage NPN power transistor |
| Buy | Stock & Price |
FEATURES
● Low collector-emitter saturation voltage TAB uct(s) 3 d 1 ro D2PAK Obsolete Product(s) - Obsolete P Figure 1. Internal schematic diagram● Fast switching speed
APPLICATIONS
● Power amplifier● Switching circuits
DESCRIPTION
Order codes MJB44H11T4 Table 1. Device summary Marking Package MJB44H11 D2PAK Packaging Tape and reel May 2014 This is information on a product in full production. DocID022716 Rev 2 1/11 Absolute maximum ratings 1 Absolute maximum ratings MJB44H11T4 Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 10 A ICM PTOT t(s) TSTG c TJ Collector peak current Total dissipation at Tcase = 25 °C Storage temperature Max. operating junction temperature rodu Table 3. Thermal data te P Symbol Parameter le RthJC Obsolete Product(s) - Obso RthJA Thermal resistance junction-case max Thermal resistance junction-ambient max 20 A 50 W -55 to 150 °C 150 °C Value...
