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MJB44H11T4-A - Automotive-grade low voltage NPN power transistor

General Description

This device is an NPN transistor manufactured using new low voltage planar technology with double metal process.

The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage.

Table 1.

Key Features

  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJB44H11T4-A TAB 3 1 D2PAK Figure 1. Internal schematic diagram Automotive-grade low voltage NPN power transistor Datasheet - production data Features • Designed for automotive applications and AEC- Q101 qualified • Low collector-emitter saturation voltage • Fast switching speed Applications • Power amplifier • Switching circuits Description This device is an NPN transistor manufactured using new low voltage planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage. Order codes MJB44H11T4-A Table 1. Device summary Marking Package MJB44H11-A D2PAK May 2014 This is information on a product in full production. DocID026340 Rev 1 Packaging Tape and reel 1/11 www.st.