MJD112T4 Overview
Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. TAB 3 1 TO-252 (DPAK) Figure 1.
Key Features
- Good hFE linearity
- High fT frequency
| Part | MJD112T4 |
|---|---|
| Description | Complementary power Darlington transistors |
| Category | Transistor |
| Manufacturer | STMicroelectronics |
| Size | Direct Link |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| MJD112 | Fairchild Semiconductor | NPN Silicon Darlington Transistor |
| MJD112 | Micro Commercial Components | Silicon NPN epitaxial planer Transistors |
| MJD112 | Continental Device India | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS |
| MJD112 | Galaxy Microelectronics | Epitaxial Planar NPN Transistor |
| MJD112 | Micro Commercial Components | NPN Transistor |