STMicroelectronics MJD122-1
This device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration.| Part No. | MJD122-1 |
|---|---|
| Datasheet | MJD122-1 Download |
| Manufacturer |  STMicroelectronics |
| Description | Low voltage NPN power Darlington transistor |
| Buy | Stock & Price |
FEATURES
● Low collector-emitter saturation voltage● Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application
● Linear and switching industrial equipment
DESCRIPTION
Product status links MJD122-1 Product summary Order code MJD122-1 Marking MJD122 Polarity NPN Package IPAK Packing Tube DS14967 - Rev 2 - June 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Symbol VCEO VCBO VEBO IC ICM IB PTOT Tstg TJ Table 1. Absolute maximum ratings Parameter Collector-emitter voltage (IB = 0 A) Collector-base voltage (IE = 0 A) Emitter-base voltage (IC = 0 A) Collector current Collector peak current Base current Total power dissipation at TC = 25 °C Storage temperature range Operating junction temperature range Symbol RthJC Table 2. Thermal data Parameter Thermal resistance, junction-to-case MJD122-1 Electrical ratings Value Unit V 100 V 5 V 8 A 16 A 120 mA 20 W -65 to 150 °C Value 6.25 Unit °C/W DS14967 - Rev 2 page 2/11 MJD122-1 Electrical characteristics 2 Electrical characteristics TC = 25°C unless otherwise specified.
