STMicroelectronics MJD122T4
Complementary power Darlington transistor
| Part No. | MJD122T4 |
|---|---|
| Datasheet | MJD122T4 Download |
| Manufacturer |  STMicroelectronics |
| Description | Complementary power Darlington transistor |
| Buy | Stock & Price |
FEATURES
TAB 23 1 DPAK● Low collector-emitter saturation voltage
● Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application C (2, TAB) C (2, TAB) B (1) B (1) R1 R2 R1 R2 SC07840 E (3) SC07850 E (3) NPN: R1 = 7 kΩ, R2 = 70 Ω PNP: R1 = 16 kΩ, R2 = 60 Ω
● Linear and switching industrial equipment
DESCRIPTION
These devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Product status links MJD122T4 MJD127T4 Product summary Order code MJD122T4 Marking MJD122 Polarity NPN Package DPAK Packing Tape and reel Order code MJD127T4 Marking MJD127 Polarity PNP Package DPAK Packing Tape and reel DS14966 - Rev 2 - June 2025 For further information, contact your local STMicroelectronics sales office. 1 Note: Electrical ratings Symbol VCEO VCBO VEBO IC ICM IB PTOT Tstg TJ Table 1. Absolute maximum ratings Parameter Collector-emitter voltage (IB = 0 A) Collector-base voltage (IE = 0 A) Emitter-base vol...
